APTC60HM45SCTG APTC60HM45SCTG ? rev 2 september, 2009 www.microsemi.com 1 ? 8 out1 out2 g1 s1 cr2a q1 cr1a cr3b cr1b g2 s2 ntc1 cr2b q2 cr4b 0/vbus cr4a cr3a g4 g3 s3 s4 q4 nt c2 q3 vbus out1 out2 ntc1 ntc2 g3 s3 vbus g1 s1 g4 g2 s2 0/vbus s4 absolute maximum ratings these devices are sens itive to electrostatic discharge. prope r handing procedures should be followed . see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 600 v t c = 25c 49 i d continuous drain current t c = 80c 38 i dm pulsed drain current 130 a v gs gate - source voltage 20 v r dson drain - source on resistance 45 m p d maximum power dissipation t c = 25c 250 w i ar avalanche current (repetitive and non repetitive) 15 a e ar repetitive avalanche energy 3 e as single pulse avalanche energy 1900 mj v dss = 600v r dson = 45m max @ tj = 25c i d = 49a @ tc = 25c application ? motor control ? switched mode power supplies ? uninterruptible power supplies features ? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated ? parallel sic schottky diode - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? kelvin source for easy drive ? very low stray inductance - symmetrical design - lead frames for power connections ? internal thermistor fo r temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? rohs compliant full - bridge series & sic parallel diodes super junction mosfet power module
APTC60HM45SCTG APTC60HM45SCTG ? rev 2 september, 2009 www.microsemi.com 2 ? 8 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 600v t j = 25c 25 i dss zero gate voltage drain current v gs = 0v,v ds = 600v t j = 125c 250 a r ds(on) drain ? source on resistance v gs = 10v, i d = 22.5a 40 45 m v gs(th) gate threshold voltage v gs = v ds , i d = 3ma 2.1 3 3.9 v i gss gate ? source leakage current v gs = 20 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 7.2 c oss output capacitance v gs = 0v ; v ds = 25v f = 1mhz 8.5 nf q g total gate charge 150 q gs gate ? source charge 34 q gd gate ? drain charge v gs = 10v v bus = 300v i d = 44a 51 nc t d(on) turn-on delay time 21 t r rise time 30 t d(off) turn-off delay time 100 t f fall time inductive switching @ 125c v gs = 10v v bus = 400v i d = 50a r g = 5 45 ns e on turn-on switching energy 405 e off turn-off switching energy inductive switching @ 25c v gs = 10v ; v bus = 400v i d = 50a ; r g = 5 520 j e on turn-on switching energy 658 e off turn-off switching energy inductive switching @ 125c v gs = 10v ; v bus = 400v i d = 50a ; r g = 5 635 j series diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 200 v t j = 25c 250 i rm maximum reverse leakage current v r =200v t j = 125c 500 a i f dc forward current t c = 85c 30 a i f = 30a 1.1 1.15 i f = 60a 1.4 v f diode forward voltage i f = 30a t j = 125c 0.9 v t j = 25c 24 t rr reverse recovery time t j = 125c 48 ns t j = 25c 33 q rr reverse recovery charge i f = 30a v r = 133v di/dt = 200a/s t j = 125c 150 nc
APTC60HM45SCTG APTC60HM45SCTG ? rev 2 september, 2009 www.microsemi.com 3 ? 8 parallel diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 100 400 i rm maximum reverse leakage current v r =600v t j = 175c 200 2000 a i f dc forward current tc = 100c 20 a t j = 25c 1.6 1.8 v f diode forward voltage i f = 20a t j = 175c 2.0 2.4 v q c total capacitive charge i f = 20a, v r = 300v di/dt =800a/s 28 nc f = 1mhz, v r = 200v 130 c total capacitance f = 1mhz, v r = 400v 100 pf thermal and package characteristics symbol characteristic min typ max unit transistor 0.5 series diode 1.2 r thjc junction to case thermal resistance parallel diode 1.5 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 4000 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m5 1.5 4.7 n.m wt package weight 160 g temperature sensor ntc (see application note apt0406 on www.micr osemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 t: thermistor temperature r t : thermistor value at t
APTC60HM45SCTG APTC60HM45SCTG ? rev 2 september, 2009 www.microsemi.com 4 ? 8 sp4 package outline (dimensions in mm) all dimensions marked " * " are tolerenced as : see application note apt0501 - mounting instructi ons for sp4 power modules on www.microsemi.com
APTC60HM45SCTG APTC60HM45SCTG ? rev 2 september, 2009 www.microsemi.com 5 ? 8 typical coolmos performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impe dance, junction to case vs pulse duration 4v 4.5v 5v 5.5v 6v 6.5v 0 40 80 120 160 200 240 280 320 360 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =15&10v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c 0 20 40 60 80 100 120 140 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 0 20 40 60 80 100 120 140 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 50a 0 5 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
APTC60HM45SCTG APTC60HM45SCTG ? rev 2 september, 2009 www.microsemi.com 6 ? 8 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage (normalized) on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d = 50a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10 ms 1 ms 100 s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited b y r ds on single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =120v v ds =300v v ds =480v 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 160 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =50a t j =25c
APTC60HM45SCTG APTC60HM45SCTG ? rev 2 september, 2009 www.microsemi.com 7 ? 8 t j =25c t j =150c 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage delay times vs current td(on) td(off) 0 20 40 60 80 100 120 140 0 1020304050607080 i d , drain current (a) t d(on) and t d(off) (ns) v ds =400v r g =5 ? t j =125c l=100h rise and fall times vs current t r t f 0 10 20 30 40 50 60 70 0 1020304050607080 i d , drain current (a) t r and t f (ns) v ds =400v r g =5 ? t j =125c l=100h switching energy vs current e on e off 0 0.4 0.8 1.2 1.6 0 1020304050607080 i d , drain current (a) switching energy (mj) v ds =400v r g =5 ? t j =125c l=100h e on e off 0 0.5 1 1.5 2 0 1020304050 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =400v i d =50a t j =125c l=100h hard switching zcs zvs 0 50 100 150 200 250 300 5 101520253035404550 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =400v d=50% r g =5 ? t j =125c t c =75c
APTC60HM45SCTG APTC60HM45SCTG ? rev 2 september, 2009 www.microsemi.com 8 ? 8 typical sic diode performance curve maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 5 10 15 20 25 30 35 40 0 0.5 1 1.5 2 2.5 3 3.5 v f forward voltage (v) i f forward current (a) reverse characteristics t j =25c t j =75c t j =125c t j =175c 0 50 100 150 200 250 300 350 400 200 300 400 500 600 700 800 v r reverse voltage (v) i r reverse current (a) capacitance vs.reverse voltage 0 100 200 300 400 500 600 700 800 1 10 100 1000 v r reverse voltage c, capacitance (pf) ?coolmos? comprise a new family of transistors developed by infineon technologies ag. ?coolm os? is a trademark of infineon technologies ag?. microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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